FTA02N65B

FTP02N65B FTA02N65B FTQ02N65B N-Channel MOSFET Applications: Adaptor Charger SMPS Standby Power LCD Panel Power Pb Lead Free Package and Finish RDS(ON) (Max.) 8.0 Ω ID 1.5A VDSS 650V Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves D G D S TO-220 G DS TO-220F G Ordering Information PART NUMBER FTP02N65B FTA02N65B FTQ02N65B PACKAGE TO-220 TO-220F TO-126 BRAND FTP02N65B FTA02N65B Q02N65B S G DS TO-126 Packages Not to Scale Absolute Maximum Ratings Symbol VDSS ID ID@ 100 C IDM PD VGS EAS IAS dv/dt TL TPKG TJ and TSTG o TC=25 oC unless otherwise specified FTP02N65B FTA02N65B FTQ02N65B (NOTE *1) 1.5 Figure 3 (NOTE *2) 52 o Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 C Gate-to-Source Voltage Single Pulse Avalanche Engergy L=10 mH, ID=2.24 Amps Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE *3) Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range Units V 650 1.5* A 21 0.17 W W/ C V mJ o Figure 6 0.42 ± 30 25 Figure 8 3.0 300 260 -55 to 150 V/ns o C *Drain current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device. ©2007 InPower Semic...