HAT1020R

HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1020R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings – 30 ± 20 –5 – 40 –5 Unit V V A A A W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 2.5 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min – 30 ± 20 — — – 1.0 — — 5.0 — — — — — — — — — Typ — — — — — 0.04 0.07 7.5 860 560 165 30 170 40 65 – 0.9 55 Max — — ± 10 –10 – 2.5 0.07 0.13 — — — — — — — — – 1.4 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = – 5 A, VGS = 0 Note3 IF = – 5 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = –10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, I D = – 1 mA I D = – 3 A, VGS = – 10 V Note3 I D = – 3 A, VGS = – 4 V Note3 I D = – 3 A, VDS = – 10 V Note3 VDS = – 10 V VGS = 0 f = 1MHz VGS = – 4 V, ID = – 3 A VDD ≅ – 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage ...