FDS6900AS
May 2005
FDS6900AS
General Description
Dual N-Ch PowerTrench® SyncFET™
Features
• Q2: Optimized to minimize...
FDS6900AS
May 2005
FDS6900AS
General Description
Dual N-Ch PowerTrench® SyncFET™
Features
Q2: Optimized to minimize conduction losses Includes SyncFET
Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 28mΩ @ VGS = 4.5V Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27mΩ @ VGS = 10V RDS(on) = 34mΩ @ VGS = 4.5V 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and
Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology.
8.2A, 30V
6.9A, 30V
S1D2 D S1D2 D S1D2 D G1 D
1
2
3
Q2 Q1
8
7
6
5
Dual N-Channel SyncFet
SO-8
Pin 1
SO-
D1 D1 S
S2 G2 G
4
S
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage
TA = 25°C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 ±20 6.9 20 2 1.6 1 0.9 –55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
Drain Current
±20 8.2 30
(Note 1a) (Note 1b) (N...