Document
TPC8209
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)
TPC8209
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-6J1E
Drain power dissipation (t = 10s) (Note 2a)
Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b)
Weight: 0.08 g (typ.)
Drain power dissipation (t = 10s) (Note 2b)
PD (1)
0.75 W
Circuit Configuration
8 7 6 5
PD (2) EAS IAR EAR Tch Tstg
0.45
Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range
32.5 5 0.1 150 −55~150
mJ A mJ °C °C 1 2 3 4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
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TPC8209
Thermal Characteristics
Characteristics Single-device operation (Note 2a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10s) (Note 1a) Single-device value at dual operation (Note 2b)
114 °C/W 167
Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b)
Single-device operation (Note 2a)
278
Marking (Note 6)
TPC8209
※
Type Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2:
FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm)
(a)
(b)
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: · on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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Electrical Character.