DatasheetsPDF.com

TPC8209 Dataheets PDF



Part Number TPC8209
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Field Effect Transistor
Datasheet TPC8209 DatasheetTPC8209 Datasheet (PDF)

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Chara.

  TPC8209   TPC8209



Document
TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation (t = 10s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.08 g (typ.) Drain power dissipation (t = 10s) (Note 2b) PD (1) 0.75 W Circuit Configuration 8 7 6 5 PD (2) EAS IAR EAR Tch Tstg 0.45 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 32.5 5 0.1 150 −55~150 mJ A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-18 TPC8209 Thermal Characteristics Characteristics Single-device operation (Note 2a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10s) (Note 1a) Single-device value at dual operation (Note 2b) 114 °C/W 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) Single-device operation (Note 2a) 278 Marking (Note 6) TPC8209 ※ Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) FR-4 25.4 ´ 25.4 ´ 0.8 (unit: mm) (a) (b) a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: · on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-02-18 TPC8209 Electrical Character.


SKY13404-466LF TPC8209 NGD8209N


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)