Silicon P-Channel Power MOSFET
HAT1031T
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-528D (Z) 5th. Edition December 1998 Feature...
Description
HAT1031T
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-528D (Z) 5th. Edition December 1998 Features
Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
TSSOP–8
65 34
87
1 D
8 D
12
4 G
5 G
S S 2 3
S S 6 7
1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate
MOS1
MOS2
HAT1031T
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –20 ±10 –2.5 –20 –2.5
Unit V V A A A W W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg
Note2 Note3
1 1.5 150 –55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –20 ±10 — — –0.5 — — 2.6 — — — — — — — — — Typ — — — — — 0.13 0.21 4 390 200 70 14 75 60 55 –0.9 45 Max — — ±10 –1 –1.5 0.16 0.28 — — — — — — — — –1.17 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = –2.5A, VGS = 0 Note4 IF = –2.5A, VGS = 0 diF/ dt =20A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±8V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10V, I D = –1mA I D = –2A, VGS = –4V Note4 I D = –2A, VGS = –2.5V Note4 I D = –2A, VDS = –10V Note4 VDS = –10V VGS = 0...
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