DatasheetsPDF.com

VS-70HFL20S02 Dataheets PDF



Part Number VS-70HFL20S02
Manufacturers Vishay
Logo Vishay
Description Fast Recovery Diodes
Datasheet VS-70HFL20S02 DatasheetVS-70HFL20S02 Datasheet (PDF)

www.vishay.com VS-40HFL, VS-70HFL, VS-85HFL Series Vishay Semiconductors Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A DO-5 (DO-203AB) PRIMARY CHARACTERISTICS IF(AV) Package 40 A, 70 A, 85 A DO-5 (DO-203AB) Circuit Configuration Single FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Stud cathode and stud anode versions • Types up to 100 VRRM • Material categorization: for definitions of compliance please see www.vi.

  VS-70HFL20S02   VS-70HFL20S02



Document
www.vishay.com VS-40HFL, VS-70HFL, VS-85HFL Series Vishay Semiconductors Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A DO-5 (DO-203AB) PRIMARY CHARACTERISTICS IF(AV) Package 40 A, 70 A, 85 A DO-5 (DO-203AB) Circuit Configuration Single FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Stud cathode and stud anode versions • Types up to 100 VRRM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC power supplies • Inverters • Converters • Choppers • Ultrasonic systems • Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 40HFL IF(AV) IFSM TC maximum 50 Hz 60 Hz 40 85 400 420 50 Hz I2t 60 Hz I2t 800 730 11 300 VRRM trr Range 100 to 1000 See Recovery Characteristics table TJ Range -40 to +125 70HFL 70 85 700 730 2450 2240 34 650 100 to 1000 See Recovery Characteristics table -40 to +125 85HFL 85 85 1100 1151 6050 5523 85 560 100 to 1000 See Recovery Characteristics table -40 to +125 UNITS A °C A A2s I2s V ns °C Revision: 11-Jan-18 1 Document Number: 93150 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-40HFL, VS-70HFL, VS-85HFL Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER (1) VRRM, MAXIMUM PEAK REPETITIVE REVERSE VOLTAGE TJ = - 40 °C TO 125 °C V VRSM, MAXIMUM PEAK NON-REPETITIVE REVERSE VOLTAGE TJ = 25 °C TO 125 °C V IFM, MAXIMUM PEAK REVERSE CURRENT AT RATED VRRM mA TJ = 25 °C TJ = 125 °C VS-40HFL10S02, VS-40HFL10S05 VS-40HFL20S02, VS-40HFL20S05 100 200 150 300 VS-40HFL40S02, VS-40HFL40S05 VS-40HFL60S02, VS-40HFL60S05 VS-40HFL80S05 400 600 800 500 0.1 10 700 900 VS-40HFL100S05 1000 1100 VS-70HFL10S02, VS-70HFL10S05 VS-70HFL20S02, VS-70HFL20S05 100 200 150 300 VS-70HFL40S02, VS-70HFL40S05 VS-70HFL60S02, VS-70HFL60S05 VS-70HFL80S05 400 600 800 500 0.1 15 700 900 VS-70HFL100S05 1000 1100 VS-85HFL10S02, VS-85HFL10S05 VS-85HFL20S02, VS-85HFL20S05 100 200 150 300 VS-85HFL40S02, VS-85HFL40S05 VS-85HFL60S02, VS-85HFL60S05 VS-85HFL80S05 400 600 800 500 0.1 20 700 900 VS-85HFL100S05 1000 1100 Note (1) Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.  FORWARD CONDUCTION PARAMETER Maximum average forward current  at maximum case temperature Maximum RMS forward current Maximum peak repetitive forward current SYMBOL IF(AV) IF(RMS) IFRM Maximum peak, one-cycle  non-repetitive forward current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing (1) Maximum value of threshold voltage Maximum value of forward slope resistance Maximum forward voltage drop Note (1) I2t for time tx = I2t x tx I2t VF(TO) rF VFM TEST CONDITIONS 180° conduction, half sine wave 40HFL 40 Sinusoidal half wave, 30° conduction t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Sinusoidal half wave, 100 % VRRM reapplied, initial TJ = TJ maximum Sinusoidal half wave, no voltage reapplied, initial TJ = TJ maximum 100 % VRRM reapplied, initial TJ = TJ maximum t = 10 ms t = 8.3 ms No voltage reapplied, initial TJ = TJ maximum t = 0.1 ms to 10 ms, no voltage reapplied TJ = 125 °C TJ = 25 °C, IFM =  x IF(AV) 63 220 400 420 475 500 800 730 1130 1030 11 300 1.081 6.33 1.95 70HFL 70 75 110 380 700 730 830 870 2450 2240 3460 3160 34 650 1.085 3.40 1.85 85HFL 85 134 470 1100 1151 1308 1369 6050 5523 8556 7810 85 560 1.128 2.11 1.75 UNITS A °C A A A A2s A2s V m V Revision: 11-Jan-18 2 Document Number: 93150 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-40HFL, VS-70HFL, VS-85HFL Series Vishay Semiconductors RECOVERY CHARACTERISTICS PARAMETER SYMBOL Typical reverse recovery time trr Typical reverse recovered charge Qrr TEST CONDITIONS TJ = 25 °C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/μs TJ = 25 °C, - dIF/dt = 25 A/μs, IFM =  x rated IF(AV) TJ = 25 °C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/μs TJ = 25 °C, - dIF/dt = 25 A/μs, IFM =  x rated IF(AV) 40HFL... S02 S05 70 180 200 500 160 750 240 1300 70HFL... S02 S05 60 150 200 500 90 500 240 1300 85HFL... S02 S05 50 120 200 500 70 340 240 1300 UNITS ns nC THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 40HFL 70HFL 85HFL UNITS Junction operating temperature range Storage temperature range Maximum.


VS-70HFL10S05 VS-70HFL20S02 VS-70HFL20S05


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)