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VS-40HFL, VS-70HFL, VS-85HFL Series
Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A
DO-5 (DO-203AB)
PRIMARY CHARACTERISTICS
IF(AV) Package
40 A, 70 A, 85 A DO-5 (DO-203AB)
Circuit Configuration
Single
FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Stud cathode and stud anode versions • Types up to 100 VRRM • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS • DC power supplies • Inverters • Converters • Choppers • Ultrasonic systems • Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
40HFL
IF(AV) IFSM
TC maximum 50 Hz 60 Hz
40 85 400 420
50 Hz I2t
60 Hz I2t
800 730 11 300
VRRM trr
Range
100 to 1000
See Recovery Characteristics table
TJ Range
-40 to +125
70HFL 70 85 700 730
2450 2240 34 650 100 to 1000 See Recovery Characteristics table -40 to +125
85HFL 85 85
1100 1151 6050 5523 85 560 100 to 1000 See Recovery Characteristics table -40 to +125
UNITS A °C
A
A2s I2s
V ns °C
Revision: 11-Jan-18
1 Document Number: 93150
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-40HFL, VS-70HFL, VS-85HFL Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER (1)
VRRM, MAXIMUM PEAK REPETITIVE
REVERSE VOLTAGE
TJ = - 40 °C TO 125 °C V
VRSM, MAXIMUM PEAK NON-REPETITIVE
REVERSE VOLTAGE
TJ = 25 °C TO 125 °C V
IFM, MAXIMUM PEAK REVERSE CURRENT AT RATED VRRM mA
TJ = 25 °C
TJ = 125 °C
VS-40HFL10S02, VS-40HFL10S05 VS-40HFL20S02, VS-40HFL20S05
100 200
150 300
VS-40HFL40S02, VS-40HFL40S05 VS-40HFL60S02, VS-40HFL60S05 VS-40HFL80S05
400 600 800
500 0.1 10
700 900
VS-40HFL100S05
1000
1100
VS-70HFL10S02, VS-70HFL10S05 VS-70HFL20S02, VS-70HFL20S05
100 200
150 300
VS-70HFL40S02, VS-70HFL40S05 VS-70HFL60S02, VS-70HFL60S05 VS-70HFL80S05
400 600 800
500 0.1 15
700 900
VS-70HFL100S05
1000
1100
VS-85HFL10S02, VS-85HFL10S05 VS-85HFL20S02, VS-85HFL20S05
100 200
150 300
VS-85HFL40S02, VS-85HFL40S05 VS-85HFL60S02, VS-85HFL60S05 VS-85HFL80S05
400 600 800
500 0.1 20
700 900
VS-85HFL100S05
1000
1100
Note
(1) Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
FORWARD CONDUCTION
PARAMETER
Maximum average forward current at maximum case temperature
Maximum RMS forward current Maximum peak repetitive forward current
SYMBOL
IF(AV)
IF(RMS) IFRM
Maximum peak, one-cycle non-repetitive forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing (1) Maximum value of threshold voltage Maximum value of forward slope resistance Maximum forward voltage drop
Note (1) I2t for time tx = I2t x tx
I2t VF(TO)
rF VFM
TEST CONDITIONS 180° conduction, half sine wave
40HFL 40
Sinusoidal half wave, 30° conduction
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
Sinusoidal half wave, 100 % VRRM reapplied, initial TJ = TJ maximum
Sinusoidal half wave, no voltage reapplied, initial TJ = TJ maximum
100 % VRRM reapplied, initial TJ = TJ maximum
t = 10 ms t = 8.3 ms
No voltage reapplied, initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = 125 °C TJ = 25 °C, IFM = x IF(AV)
63 220 400
420
475
500
800 730 1130 1030 11 300 1.081 6.33 1.95
70HFL 70 75 110 380 700
730
830
870
2450 2240 3460 3160 34 650 1.085 3.40 1.85
85HFL 85
134 470 1100 1151 1308 1369 6050 5523 8556 7810 85 560 1.128 2.11 1.75
UNITS A °C A A
A
A2s
A2s V
m V
Revision: 11-Jan-18
2 Document Number: 93150
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-40HFL, VS-70HFL, VS-85HFL Series
Vishay Semiconductors
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Typical reverse recovery time
trr
Typical reverse recovered charge
Qrr
TEST CONDITIONS
TJ = 25 °C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/μs
TJ = 25 °C, - dIF/dt = 25 A/μs, IFM = x rated IF(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V, dIF/dt = 100 A/μs
TJ = 25 °C, - dIF/dt = 25 A/μs, IFM = x rated IF(AV)
40HFL... S02 S05 70 180
200 500
160 750
240 1300
70HFL... S02 S05 60 150
200 500
90 500
240 1300
85HFL... S02 S05 50 120
200 500
70 340
240 1300
UNITS ns nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
40HFL 70HFL 85HFL UNITS
Junction operating temperature range Storage temperature range Maximum.