HAT1038R

HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th. Edition February 1999 Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1038R/HAT1038RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings – 60 ± 20 – 3.5 – 28 – 3.5 — – 3.5 Unit V V A A A — A — mJ W W °C °C EAR Note4 — 1.05 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω 2 HAT1038R/HAT1038RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1038R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS – 60 ± 20 — — — — — – 1.2 — — 3 — — — — — — — — — Typ — — — — ...