HAT1043M

HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse) I DR Note 1 Note 2 Note 2 Note 3 Ratings –20 ±12 –4.4 –17.6 –4.4 2.0 1.05 150 –55 to +150 Unit V V A A A W W °C °C Pch (pulse) Pch (continuous) Channel temperature Storage temperature Note: Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min –20 — — –0.4 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 4 — — — — — — — — — — — — Typ — — — — 55 85 7 750 310 220 11 2 3.5 15 100 85 100 –0.95 50 Max — ±0.1 –1 –1.4 65 110 — — — — — — — — — — — –1.23 — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = –4.4 A, VGS = 0 I F = –4.4 A, VGS = 0 diF/ dt = –20 A/ µs Test Conditions I D = –10 mA, VGS = 0 VGS = ±12 V, VDS = 0 VDS = –20 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –3 A, VGS = –4.5 V Note 1 I D = –3 A, VGS = –2.5 V Note 1 I D...