HAT1044M

HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1044M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID* 2 1 Ratings -30 ±20 -4.5 -18 -4.5 2 3 Unit V V A A A W W °C °C I D(pulse) * I DR* 2 Pch (pulse)* 2.0 1.05 150 –55 to +150 Pch (continuous) * Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min -30 — — -1.0 — — 3 — — — — — — — — — Typ — — — — 50 80 5.5 600 220 150 12 85 55 55 -0.95 50 Max — ±0.1 -1 -2.5 60 105 — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns IF = -4.5A, VGS = 0 *1 IF = -4.5A, VGS = 0 diF/ dt =-20A/µs Test Conditions I D = 10mA, VGS = 0 VGS = ±20V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10V, I D = -1mA I D = -3A, VGS = -10V *1 I D = -3A, VGS = -4.5V *1 I D = -3A, VDS = -10V *1 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -3A RL = 3.3Ω Drain to source breakdown voltage V(BR)DSS Ga...