Silicon N-Channel Power MOSFET
HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-438 H (Z) 9th. Edition June 1997 Features
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Description
HAT2016R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-438 H (Z) 9th. Edition June 1997 Features
Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT2016R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 Note3 Note1
Ratings 30 ±20 6.5 52 6.5 2 3 150 –55 to +150
Unit V V A A A W W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
2
HAT2016R
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(...
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