Document
HAT2020R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-439 J (Z) 11th. Edition February 1999 Features
• • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
HAT2020R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ± 20 8 64 8 2.5 150 – 55 to + 150
Unit V V A A A W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ± 20 — — 1.0 — — 7 — — — — — — — — — Typ — — — — — 0.020 0.030 11 780 560 240 35 240 50 100 0.8 55 Max — — ± 10 10 2.0 0.028 0.050 — — — — — — — — 1.3 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 8 A, VGS = 0 Note3 IF = 8 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1m A I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 4 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
HAT2020R
Main Characteristics
Power vs. Temperature Derating 4.0
Pch (W) I D (A)
100 30 10 3
Maximum Safe Operation Area
10 µs 100 µs
Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0
PW
DC Op er at
1
m
=
s
10
m
s
Channel Dissipation
Drain Current
ion
2.0
1
(P
W
1.0
Operation in 0.3 this area is limited by R DS(on) 0.1
< Note 10 4 s)
0
50
100
150 Ta (°C)
200
Ambient Temperature
0.03 Ta = 25 °C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics 20 10V 6V 5V 4.5 V 4V
3V
Typical Transfer Characteristics 20 V DS = 10 V Pulse Test
3.5 V
I D (A)
Pulse Test
12
ID Drain Current
(A)
16
16
12 25°C Tc = 75°C –25°C 4
Drain Current
8
8
4
VGS = 2.5 V
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
3
HAT2020R
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1
V DS(on) (V)
Pulse Test
0.08
Drain to Source Voltage
0.06 ID=2A 0.04 1A 0.5 A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10
Drain to Source On State Resistance R DS(on) ( Ω )
0.10
0.05 0.02
VGS = 4 V 10 V
0.02
0.01
0.005 0.2
0.5 1 2 Drain Current
5 10 I D (A)
20
Static Drain to Source on State Resistance R DS(on) ( Ω)
Pulse Test 0.08
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.10
50
Forward Transfer Admittance vs. Drain Current
20 10 5 2 1 0.5 0.2
Tc = –25 °C 25 °C
0.06 I D = 0.5 A, 1 A, 2 A 0.04 V GS = 4 V 0.5 A, 1 A, 2 A 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C)
75 °C
0.02
V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A)
4
HAT2020R
Body–Drain Diode Reverse Recovery Time 10000 3000 1000 300 100 30 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Ciss Coss Crss Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz
500
Reverse Recovery Time trr (ns)
100 50
20 10 5 0.2 di/dt = 20 A/µs V GS = 0, Ta = 25°C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A)
Capacitance C (pF)
200
Dynamic Input Characteristics
V DS (V)
V GS (V)
50
I D= 8 A V DD = 5 V 10 V 25 V V DS V GS
20
1000 500
Switching Characteristics
Switching Time t (ns)
40
16
Drain to Source Voltage
30
12
Gate to Source Voltage
200 100 50
tr tf t d(off) t d(on) V GS = 4 V, V DD = 10 V PW = 3 µs, duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20
20
8
10
V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc)
4 0 40
20 10 0.2
0
5
HAT2020R
Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test
16
12 V GS = 0 V 5V
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance γ s (t)
1
D=1 0.5
0.1
0.2
0.1 0.05
0.02 0.01
e
0.01
θ ch – f(t) = γ s (t) • θ ch – f θ ch – f = 83.3 °C/W, Ta = 25 °C When u.