Document
HAT2025R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-518C (Z) 4th. Edition February 1999 Features
• • • • • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
HAT2025R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ± 20 8 64 8 2.5 150 – 55 to + 150
Unit V V A A A W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ± 20 — — 1.3 — — 7 — — — — — — — — — Typ — — — — — 0.019 0.030 11 660 510 130 30 265 35 58 0.8 55 Max — — ± 10 10 2.4 0.026 0.050 — — — — — — — — 1.3 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 8 A, VGS = 0 Note3 IF = 8 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4.5 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 4 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
HAT2025R
Main Characteristics
Power vs. Temperature Derating 4.0
Pch (W) I D (A)
100 30 10 3
Maximum Safe Operation Area
10 µs 100 µs
Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0
PW
DC Op er
1
m
=
s
10
m
s
Channel Dissipation
Drain Current
at
2.0
1 0.3 0.1 0.03
ion
(P
W
1.0
Operation in this area is limited by R DS(on)
< Note 10 4 s)
0
50
100
150 Ta (°C)
200
Ambient Temperature
Ta = 25 °C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm)
20
Typical Output Characteristics 10V 5 V 5V 4.5 V 4V 3.5 V
(A)
Typical Transfer Characteristics 50 –25°C 25°C Tc = 75°C 30
I D (A)
16
40
12
Drain Current
8
Drain Current
ID
Pulse Test
3V
20
4 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
10 V DS = 10 V Pulse Test 0 2 4 6 Gate to Source Voltage 10 8 V GS (V)
3
HAT2025R
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State R.