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HAT2025R Dataheets PDF



Part Number HAT2025R
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel Power MOSFET
Datasheet HAT2025R DatasheetHAT2025R Datasheet (PDF)

HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th. Edition February 1999 Features • • • • • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse.

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HAT2025R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-518C (Z) 4th. Edition February 1999 Features • • • • • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 20 8 64 8 2.5 150 – 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 20 — — 1.3 — — 7 — — — — — — — — — Typ — — — — — 0.019 0.030 11 660 510 130 30 265 35 58 0.8 55 Max — — ± 10 10 2.4 0.026 0.050 — — — — — — — — 1.3 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 8 A, VGS = 0 Note3 IF = 8 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 10 V Note3 I D = 4 A, VGS = 4.5 V Note3 I D = 4 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 4 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 HAT2025R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) 100 30 10 3 Maximum Safe Operation Area 10 µs 100 µs Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 PW DC Op er 1 m = s 10 m s Channel Dissipation Drain Current at 2.0 1 0.3 0.1 0.03 ion (P W 1.0 Operation in this area is limited by R DS(on) < Note 10 4 s) 0 50 100 150 Ta (°C) 200 Ambient Temperature Ta = 25 °C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) 20 Typical Output Characteristics 10V 5 V 5V 4.5 V 4V 3.5 V (A) Typical Transfer Characteristics 50 –25°C 25°C Tc = 75°C 30 I D (A) 16 40 12 Drain Current 8 Drain Current ID Pulse Test 3V 20 4 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 10 V DS = 10 V Pulse Test 0 2 4 6 Gate to Source Voltage 10 8 V GS (V) 3 HAT2025R Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State R.


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