HAT2033R

HAT2033R/HAT2033RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-664B (Z) 3rd. Edition February 1999 Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2033R/HAT2033RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2033R HAT2033RJ Avalanche energy HAT2033R HAT2033RJ Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings 60 ± 20 7 56 7 — 7 Unit V V A A A — A — mJ W °C °C EAR Note4 — 4.2 2.5 150 – 55 to + 150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. Value at Tch=25°C, Rg≥50Ω 2 HAT2033R/HAT2033RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2033R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS 60 ± 20 — — — — — 1.2 — — 6.5 — — — — — — — — — Typ — — — — — — — — 0.03 0.04 10 740 370 130 13 55 140 95 0.82 45 Max — — ± 10 1 0.1 — 10 2.2 0.038 0.053 — — — — — — — — 1.07 — Unit V V µA µA µA µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF ...