HAT2039R

HAT2039R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-667C (Z) 4th. Edition February 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2039R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ± 12 8.0 64 8.0 2.0 3.0 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — — 0.4 — — 13 — — — — — — — — — — — — Typ — — — — 0.017 0.022 20 1420 410 260 20 12 8 23 165 215 185 0.85 30 Max — ± 0.1 1 1.4 0.022 0.032 — — — — — — — — — — — 1.1 — Unit V µA µA V Ω Ω S pF pF pF nc nc nc ns ns ns ns V ns IF = 8.0 A, VGS = 0 Note4 IF = 8.0 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 VGS = ± 12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 4 A, VGS = 4 V Note4 I D = 4 A, VGS = 2.5 V Note4 I D = 4 A, VDS = 10 V Note4 VDS = 10 V VGS ...