HAT2050T

HAT2050T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-660A (Z) 2nd. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2050T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 100 ± 20 1 4 1 1.0 1.5 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ± 20 — — 1.3 — — 0.7 — — — — — — — — — Typ — — — — — 0.56 0.72 1.1 90 42 20 11 24 14 11 0.84 85 Max — — ± 10 1 2.3 0.75 1.0 — — — — — — — — 1.1 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0 Note4 I F = 1 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 0.5 A, VGS = 10 V Note4 I D = 0.5 A, VGS = 4 V Note4 I D = 0.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 ...