Document
Advanced Power Electronics Corp.
AP9985GM-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-Resistance Fast Switching Performance RoHS-compliant, halogen-free
D
BV DSS
G S
40V 15mΩ 10A
RDS(ON) ID
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9985GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G
SO-8 (M)
S
S
S
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ±20 10 8 48
Units V V A A A
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
2.5
0.02 -55 to 150 -55 to 150
W
W/°C °C °C
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W
Ordering Information
AP9985GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
200811132-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS
∆ BV DSS/∆ Tj
AP9985GM-HF-3
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 40 1 -
Typ. 0.032
Max. Units 15 25 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=40V, VGS=0V
35 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Drain-Source Leakage Current (Tj=70 C) VDS=32V ,VGS=0V
Gate-Source Leakage Total Gate Charge
2
VGS= ± 20V ID=10A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3Ω, VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V Tj=25°C, IS=2.3A, VGS=0V
Min. -
Typ. -
Max. Units 1.92 1.3 A V
Forward On Voltage
2
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width <300µs , duty cycle <2% 3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
2/5
Advanced Power Electronics Corp.
Typical Electrical Characteristics
50
50
AP9985GM-HF-3
T A = 150 C
40
T A =25 o C
40
ID , Drain Current (A)
30
ID , Drain Current (A)
10V 6.0V 5.0V 4.5V
o
10V 6.0V 5.0V 4.5V
30
V G = 4 .0 V
20
20
V G = 4.0 V
10
10
0 0 1 2 3 4
0 0 1 2 3 4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
Fig 2. Typical Output Characteristics
2.0
60
I D =10A T A =25 ° C
1.6
I D =10A V G =10V
50
Normalized RDS(ON)
2 4 6 8 10
RDS(ON) (mΩ )
40
1.2
30
0.8
20
10
0.4 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
10
Fig 4. Normalized On-Resistance vs. Junction Temperature
2.8
8
2.4
IS(A)
6
VGS(th) (V)
2.0
T j =150 o C
4
T j =25 o C
1.6
2
1.2
0
0.8 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature (oC)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
12 2400
AP9985GM-HF-3
f=1.0MHz
I D =10A VGS , Gate to Source Voltage (V)
10 2000
8
C (pF)
V DS =12V V DS =16V V DS =20V
1600
C iss
6
1200
4
800
2
400
C oss C rss
0 0 4 8 12 16 20 24 0 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Char.