N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9960GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast...
Description
AP9960GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
40V 16mΩ 42A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9960GJ) are available for low-profile applications.
GD S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 40 ±20 42 26 195 45 0.36 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
201007042
AP9960GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 40...
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