N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9477GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement
D
N-CHANNEL ENHANCEMENT M...
Description
AP9477GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
G S
60V 90mΩ 4A
▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant
D
D D
SO-8
S
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 60 +20 4 3.1 20 2.5 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W 1 200904012
Data and specifications subject to change without notice
AP9477GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=4A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Tran...
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