AP9487GM-HF

AP9487GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S 80V 85mΩ 4A ID SO-8 S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 80 +25 4 3.2 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201107182 Data and specifications subject to change without notice AP9487GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 80 1 - Typ. 0.09 7 11 3 5.5 8 4 23 5 80 50 1.5 Max. Units 85 100 3 1 25 +100 18 2.3 V V/℃ mΩ mΩ V S uA uA nA...