N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP60T10GS/P
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ ...
Description
AP60T10GS/P
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
100V 18mΩ 67A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T10GP) are available for low-profile applications. GD S G D S
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
TO-263(S)
Units V V A A A W mJ ℃ ℃
Rating 100 +20 67 42 250 167
3
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
288 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 0.75 40 62
Units ℃/W ℃/W ℃/W
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200911104
AP60T10GS/P
Electrical Characteristics@Tj=25 C(unless otherwise spe...
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