N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP60T10GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low...
Description
Advanced Power Electronics Corp.
AP60T10GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
100V 18mΩ 67A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP60T10GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP60T10GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.
G G D S
TO-263 (S)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
D
TO-220 (P)
S
Rating 100 ±20 67 42 250 167
3
Units V V A A A W mJ °C °C
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
288 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount) 4
Value 0.75 40 62
Units °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP60T10GS-HF-3TR AP60T10GP-HF-3TB RoHS-compliant halogen...
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