N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2608GY-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼...
Description
AP2608GY-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ Halogen Free & RoHS Compliant Product
D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
S
BVDSS RDS(ON)
G D
150V 2.6Ω 0.57A
ID
SOT-26
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3 3
Rating 150 +20 0.57 0.45 2 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 62.5
Unit ℃/W
Data and specifications subject to change without notice
1 201005033
AP2608GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Te...
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