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AP18N20GJ Dataheets PDF



Part Number AP18N20GJ
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP18N20GJ DatasheetAP18N20GJ Datasheet (PDF)

AP18N20GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 170mΩ 18A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindu.

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AP18N20GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 200V 170mΩ 18A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18N20GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 200 ± 20 18 9.5 60 89 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 201122062-1/4 AP18N20GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions Min. 200 2 - Typ. 0.25 9.5 19 5 6 9 21 25 19 185 3 1.6 Max. Units 170 4 10 100 ±100 30 2.4 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=8A VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=200V, VGS=0V VDS=160V, VGS=0V VGS= ± 20V ID=10A VDS=160V VGS=10V VDD=100V ID=11A RG=9.1Ω,VGS=10V RD=9.1Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1065 1700 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 180 1150 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP18N20GH/J 40 T C =25 o C 30 ID , Drain Current (A) ID , Drain Current (A) 16V 12V 10V 8.0V V G = 6 .0V 30 T C =150 C o 20 16V 12V 10V 8.0V V G = 6 .0V 20 10 10 0 0 0 4 8 12 16 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 600 2.8 I D =5A 520 T C =25 o C 2.4 I D =8A V GS =10V 2 440 Normalized RDS(ON) RDS(ON) (mΩ) 1.6 360 1.2 280 0.8 200 0.4 120 2 4 6 8 10 0 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C ) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 14 12 1.3 10 8 6 T j =150 o C T j =25 o C VGS(th) (V) 1.1 IS(A) 0.9 4 0.7 2 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP18N20GH/J 15 10000 f=1.0MHz I D =10A VGS , Gate to Source Voltage (V) 12 V DS =100V V DS =130V V DS =160V C (pF) 1000 Ciss 9 Coss 100 6 10 3 Crss 0 0 6 12 18 24 30 1 1 11 21 31 41 51 61 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10 0.2 ID (A) 1ms 0.1 0.1 0.05 1 T c =25 o C Single Pulse 0 1 10 100 10ms 100ms 1s DC PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 15 V DS =5V 12 T j =25 o C VG T j =150 C o QG ID , Drain Current (A) 9 10V QGS QGD 6 3 Charge 0 0 2 4 6 8 10 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 .


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