Document
AP18N20GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
200V 170mΩ 18A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18N20GJ) are available for low-profile applications.
G D
S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 200 ± 20 18 9.5 60 89 0.7 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 110 Unit ℃/W ℃/W
Data & specifications subject to change without notice
201122062-1/4
AP18N20GH/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions
Min. 200 2 -
Typ. 0.25 9.5 19 5 6 9 21 25 19 185 3 1.6
Max. Units 170 4 10 100 ±100 30 2.4 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC)
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
VGS=10V, ID=8A VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=200V, VGS=0V VDS=160V, VGS=0V VGS= ± 20V ID=10A VDS=160V VGS=10V VDD=100V ID=11A RG=9.1Ω,VGS=10V RD=9.1Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
1065 1700
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 180 1150
Max. Units 1.3 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
2/4
AP18N20GH/J
40
T C =25 o C
30
ID , Drain Current (A)
ID , Drain Current (A)
16V 12V 10V 8.0V V G = 6 .0V
30
T C =150 C
o
20
16V 12V 10V 8.0V V G = 6 .0V
20
10
10
0
0 0 4 8 12 16 0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
600
2.8
I D =5A
520
T C =25 o C
2.4
I D =8A V GS =10V
2
440
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
360
1.2
280
0.8
200
0.4
120 2 4 6 8 10
0 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C )
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.5
14
12
1.3
10
8
6
T j =150 o C
T j =25 o C
VGS(th) (V)
1.1
IS(A)
0.9
4
0.7
2
0
0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP18N20GH/J
15
10000
f=1.0MHz
I D =10A VGS , Gate to Source Voltage (V)
12
V DS =100V V DS =130V V DS =160V C (pF)
1000
Ciss
9
Coss
100
6
10
3
Crss
0 0 6 12 18 24 30
1 1 11 21 31 41 51 61
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
10
0.2
ID (A)
1ms
0.1
0.1
0.05
1
T c =25 o C Single Pulse
0 1 10 100
10ms 100ms 1s DC
PDM
0.02
t T
0.01
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
15
V DS =5V
12
T j =25 o C
VG
T j =150 C
o
QG
ID , Drain Current (A)
9
10V QGS QGD
6
3
Charge
0 0 2 4 6 8 10
Q
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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