Document
AP4002S/P
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
600V 5Ω 2A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for power applications.The through-hole version (AP4002P) are available for low-profile applications. G G D S
TO-263(S)
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±30 2 8 20 0.16
2
Units V V A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
20 2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 6.25 62 Units ℃/W ℃/W
Data & specifications subject to change without notice
201019072-1/4
AP4002S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C)
o
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1.0A VDS=VGS, ID=250uA VDS=10V, ID=2.0A VDS=600V, VGS=0V VGS=±30V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.0MHz
Min. 600 2 -
Typ. 1.5 12 2 5.5 10 12 52 19 375 170 45
Max. Units 5 4 100 ±1 19 600 V Ω V S uA uA nC nC nC ns ns ns ns pF pF pF
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol VSD trr Qrr Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test
o
Parameter Forward On Voltage
3 3
Test Conditions IS=2A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 340 2.2
Max. Units 1.5 V ns µC
Reverse Recovery Time
Reverse Recovery Charge
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP4002S/P
2 2
T C =25 C
1.6
o
10V 7.0V 6.0V ID , Drain Current (A)
T C =150 C
1.6
o
ID , Drain Current (A)
10V 7.0V 6.0V 5.0V
1.2
1.2
5.0V
0.8
0.8
V G =4.0V
V G =4.5V
0.4
0.4
0 0 2 4 6 8 10
0
0 10 20 30
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I D =1.0A V G =10V
1.1
Normalized BVDSS (V)
Normalized RDS(ON)
2
1.6
1
1.2
0.8 0.9
0.4
0.8 -50 0 50 100 150
0 -50 0 50 100 150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
10
1.4 8
Normalized VGS(th) (V)
1.3
1.2
IS (A)
6
T j = 150 o C
4
T j = 25 o C
1
0.8
2 0.6
0 0.1 0.3 0.5 0.7 0.9 1.1
0.4 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP4002S/P
f=1.0MHz
14 10000
VGS , Gate to Source Voltage (V)
12
10
C iss
8
I D =2A V DS =480V
C (pF)
100
6
C oss C rss
4
2
0 0 4 8 12 16
1 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Duty factor=0.5
100us
1
Normalized Thermal Response (Rthjc)
0.2
ID (A)
0.1
1ms
0
0.1
0.05
T C =25 C Single Pulse
0
o
10ms 100ms 1s DC
PDM
0.02
t T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
Millimeters
MIN NOM MAX
A A1 A2
4.25 0.00 2.20 0.70 1.07 0.30 1.15 8.30 9.70 2.04 ----4.50 -----
4.75 0.15 2.45 0.90 1.27 0.45 1.30 8.90 10.10 2.54 1.50 4.90 1.50
5.20 0.30 2.70 1.10 1.47 0.60 1.45 9.40 10.50 3.04 ----5.30 ----
D
b b1 c c1
L2.