DatasheetsPDF.com

AP4002S Dataheets PDF



Part Number AP4002S
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4002S DatasheetAP4002S Datasheet (PDF)

AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 5Ω 2A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications an.

  AP4002S   AP4002S


Document
AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 5Ω 2A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for power applications.The through-hole version (AP4002P) are available for low-profile applications. G G D S TO-263(S) D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 2 8 20 0.16 2 Units V V A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 20 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 6.25 62 Units ℃/W ℃/W Data & specifications subject to change without notice 201019072-1/4 AP4002S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) o Test Conditions VGS=0V, ID=1mA VGS=10V, ID=1.0A VDS=VGS, ID=250uA VDS=10V, ID=2.0A VDS=600V, VGS=0V VGS=±30V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.0MHz Min. 600 2 - Typ. 1.5 12 2 5.5 10 12 52 19 375 170 45 Max. Units 5 4 100 ±1 19 600 V Ω V S uA uA nC nC nC ns ns ns ns pF pF pF Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test o Parameter Forward On Voltage 3 3 Test Conditions IS=2A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/µs Min. - Typ. 340 2.2 Max. Units 1.5 V ns µC Reverse Recovery Time Reverse Recovery Charge THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP4002S/P 2 2 T C =25 C 1.6 o 10V 7.0V 6.0V ID , Drain Current (A) T C =150 C 1.6 o ID , Drain Current (A) 10V 7.0V 6.0V 5.0V 1.2 1.2 5.0V 0.8 0.8 V G =4.0V V G =4.5V 0.4 0.4 0 0 2 4 6 8 10 0 0 10 20 30 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =1.0A V G =10V 1.1 Normalized BVDSS (V) Normalized RDS(ON) 2 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 1.4 8 Normalized VGS(th) (V) 1.3 1.2 IS (A) 6 T j = 150 o C 4 T j = 25 o C 1 0.8 2 0.6 0 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4002S/P f=1.0MHz 14 10000 VGS , Gate to Source Voltage (V) 12 10 C iss 8 I D =2A V DS =480V C (pF) 100 6 C oss C rss 4 2 0 0 4 8 12 16 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Duty factor=0.5 100us 1 Normalized Thermal Response (Rthjc) 0.2 ID (A) 0.1 1ms 0 0.1 0.05 T C =25 C Single Pulse 0 o 10ms 100ms 1s DC PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS Millimeters MIN NOM MAX A A1 A2 4.25 0.00 2.20 0.70 1.07 0.30 1.15 8.30 9.70 2.04 ----4.50 ----- 4.75 0.15 2.45 0.90 1.27 0.45 1.30 8.90 10.10 2.54 1.50 4.90 1.50 5.20 0.30 2.70 1.10 1.47 0.60 1.45 9.40 10.50 3.04 ----5.30 ---- D b b1 c c1 L2.


AP05N50S-HF AP4002S AP4002P


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)