N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP99T03GP/R/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement V...
Description
Advanced Power Electronics Corp.
AP99T03GP/R/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Very Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 2.5mΩ 200A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP99T03GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP99T03GP-HF-3 is in the TO-220 through-hole package which is used where a small PCB footprint or an attached heatsink is required.
Also available in the TO-262 surface mount package (AP99T03GR-HF-3) which is used when a small PCB footprint and long leads are required.
D (tab)
G D S
TO-263 (S)
D (tab)
G D S
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
TO-220 (P)
Units V V A A A A W W °C °C
Rating 30 ± 20 200 120 120 800 156
3
3
Total Power Dissipation Total Power Dissipation
4
3.12 -55 to 150 -55 to 150
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-...
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