AP73T03GS

AP98T03GP/S RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 2.8mΩ 200A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP98T03GP) are available for low-profile applications. G D S G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 TO-263(S) Units V V A A A W W/℃ ℃ ℃ Rating 30 ±20 200 125 800 156 1.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.8 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201126072 AP98T03GP/S Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Sour...