N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP60T03GI
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast S...
Description
AP60T03GI
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 12mΩ 45A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 ±20 45 32 120 37.5 -55 to 175 -55 to 175
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.0 65 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200805051
AP60T03GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=15A
Min. 30 1 -
Typ. 25 12 4 7 9 58 18 6 200 135
Max. Units 12 25 3 10 ±100 20 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF ...
Similar Datasheet