Document
AP94T07GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
75V 8mΩ 75A
Description
Advanced Power MOSFETs fromfrom APEC provide the the The Advanced Power MOSFETs APEC provide designer with the best combination of fast switching, designer with the best combination of fast switching, ruggedized ruggedized device device design, design, low low on-resistance on-resistance and and cost-effectiveness. cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP94T07GJ) is available for low-profile applications.
G D S
TO-251(J)
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1 3
Rating 75 +20 75 58 300 125
Units V V A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation
4
2.4 -55 to 175 -55 to 175
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount) 4
Value 1.2 62.5 110
Units ℃/W ℃/W ℃/W 1 201104282
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP94T07GH/J-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
o
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=60V, VGS=0V VGS=+20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Min. 75 2 -
Typ. 55 58 14 29 13 80 26 12 390 245 1.3
Max. Units 8 5 25 +100 92 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
2350 3760
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=40A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 46 83
Max. Units 1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A.
2 4.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP94T07GH/J-HF
250 160
T C =25 C
200
o
10V 9.0V 8.0V ID , Drain Current (A)
120
T C =175 o C
ID , Drain Current (A)
10V 9.0V 8.0V 7.0V
150
7.0V
80
V G =6.0V
100
V G = 6.0V
40 50
0 0.0 4.0 8.0 12.0 16.0 20.0 24.0
0 0.0 2.0 4.0 6.0 8.0 10.0 12.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I D =40A V G =10V
2.4
Normalized BVDSS (V)
1.1
Normalized RDS(ON)
-50 0 50 100 150 200
2.0
1
1.6
1.2 0.9 0.8
0.8
0.4 -50 0 50 100 150 200
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction Temperature
40 1.6
Fig 4. Normalized On-Resistance v.s. Junction Temperature
IS(A)
o T j =175 C
20
T j =25 o C
Normalized VGS(th) (V)
1.2
30
1.2
0.8
10
0.4
0 0 0.2 0.4 0.6 0.8 1
0.0 -50 0 50 100 150 200
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP94T07GH/J-HF
f=1.0MHz
12 4000
I D =40A
10
VGS , Gate to Source Voltage (V)
8
6
C (pF)
V DS =40V V DS =45V V DS =60V
3000
C iss
2000
4 1000 2
C oss C rss
0 0 20 40 60 80 1 5 9 13 17 21 25 29
0
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
Operation in this area limited by RDS(ON) 100
Normalized Thermal Response (Rthjc)
0.2
ID (A)
10.