Document
IPG20N04S4-08
OptiMOS™-T2 Power-Transistor
Product Summary V DS R DS(on),max4) ID 40 7.6 20 V mW A
Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
Type IPG20N04S4-08
Package PG-TDSON-8-4
Marking 4N0408
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active Operating and storage temperature I D,pulse E AS I AS V GS P tot T j, T stg I D=10A T C=25 °C Value Unit
ID
20
A
20
80 230 15 ±20 65 -55 ... +175 mJ A V W °C
Rev. 1.0
page 1
2010-10-05
IPG20N04S4-08
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D= 30µA V DS=40 V, V GS=0 V, T j=25 °C V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source leakage current4) Drain-source on-state resistance4) I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=17 A 40 2.0 3.0 0.01 4.0 1 µA V 100 60 2.3 K/W
-
1 7.0
100 100 7.6 nA mW
Rev. 1.0
page 2
2010-10-05
IPG20N04S4-08
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Dynamic characteristics2) Input capacitance4) Output capacitance4) Reverse transfer capacitance4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2, 4) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) one channel active Diode pulse current one channel active
2)
C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=20 A, R G=11 W V GS=0 V, V DS=25 V, f =1 MHz
-
2260 555 17 15 5 20 13
2940 720 39 -
pF
ns
Q gs Q gd Qg V plateau V DD=32 V, I D=20 A, V GS=0 to 10 V
-
12 4 28 5.2
15 9 36 -
nC
V
IS T C=25 °C I S,pulse V GS=0 V, I F=17 A, T j=25 °C V R=20 V, I F=I S, di F/dt =100 A/µs
-
-
20
A
-
-
80
Diode forward voltage
V SD
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
36
-
ns
Reverse recovery charge2, 4)
1)
Q rr
-
34
-
nC
Current is limited by bondwire; with an R thJC =2.3 K/W the chip is able to carry 71A at 25°C. Specified by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
4)
Per channel
Rev. 1.0
page 3
2010-10-05
IPG20N04S4-08
1 Power dissipation P tot = f(T C); V GS ≥ 6 V; one channel active
2 Drain current I D = f(T C); V GS ≥ 6 V; one channel active
70
25
60 20 50 15
P tot [W]
40
30
I D [A]
10 20 5 10 0 0 50 100 150 200 0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25°C; D =0; one channel active parameter: t p
100
1 µs 10 µs
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
100 µs
10
100
0.5
Z thJC [K/W]
I D [A]
0.1 0.05
1 ms
1
10-1
0.01
single pulse
0.1 0.1 1 10 100
10-2 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V]
t p [s]
Rev. 1.0
page 4
2010-10-05
IPG20N04S4-08
5 Typ. output characteristics4) I D = f(V DS); T j = 25 °C parameter: V GS
80
10 V 6.5 V 6.25 V
6 Typ. drain-source on-state resistance4) R DS(on) = f(I D); T j = 25 °C parameter: V GS
45
5V 5.5 V 6V
6V
60
35
40
R DS(on) [mW]
I D [A]
5.5 V
25
20
5V
15
6.5 V
10 V
0 0 2 4 6 8
5 0 20 40 60 80
V DS [V]
I D [A]
7 Typ. transfer characteristics4) I D = f(V GS); V DS = 6V parameter: T j
80
8 Typ. drain-source on-state resistance4) R DS(on) = f(T j); I D = 17 A; V GS = 10 V
12
60
10
40
R DS(on) [mW]
175 °C 25 °C -55 °C
I D [A]
8
20
6
0 3 4 5 6 7
4 -60 -20 20 60 100 140 180
V GS [V]
T j [°C]
Rev. 1.0
page 5
2010-10-05
IPG20N04S4-08
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
4
10 Typ. Capacitances4) C = f(V DS); V GS = 0 V; f = 1 MHz
104
3.5
Ciss
3
V GS(th) [V]
C [pF]
300µA
103
Coss
30µA
2.5
2
102
1.5
Crss
1 -60 -20 20 60 100 140 180
10
1
0
5
10
15
20
25
30
T j [°C]
V DS [V]
11 Typical forward diode characteristicis4) IF = f(VSD) parameter: T j
102
12 Avalanche characteristics4) I A S= f(t AV) parameter: Tj(start)
100
I AV [A]
I F [A]
25 °C
101
10
100 °C 150 °C
175 °C
25 °C
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
1 1 10 100 1000
V SD [V]
t AV [µs]
Rev. 1.0
page 6
2010-10-05
IPG20N04S4-08
13 Avalanche energy4) E AS = f(T j), I D = 10A
14 Drain-source bre.