IPG20N04S4-12
OptiMOS™-T2 Power-Transistor
Product Summary V DS R DS(on),max4) ID 40 12.2 20 V mW A
Features • Dual N...
IPG20N04S4-12
OptiMOS™-T2 Power-
Transistor
Product Summary V DS R DS(on),max4) ID 40 12.2 20 V mW A
Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
Type IPG20N04S4-12
Package PG-TDSON-8-4
Marking 4N0412
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active Operating and storage temperature I D,pulse E AS I AS V GS P tot T j, T stg I D=10A T C=25 °C Value Unit
ID
20
A
20
80 80 15 ±20 41 -55 ... +175 mJ A V W °C
Rev. 1.0
page 1
2010-10-05
IPG20N04S4-12
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D= 15µA V DS=40 V, V GS=0 V, T j=25 °C V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source leakage current4) Drain-source on-state resistance...
