IRFZ34L

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 46 11 22 Single 60 0.050 FEATURES Halogen-free According to IEC 61249-2-21 Definition Advanced Process Technology Surface Mount Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC DESCRIPTION D I2PAK (TO-262) D2PAK (TO-263) G G D S D S G S N-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAKis a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. The through-hole version (IRFZ34L, SiHFZ34L) is available for low-profile applications. D2PAK (TO-263) IRFZ34STRRPbFa SiHFZ34STRPbFa D2PAK (TO-263) SiHFZ34STRL-GE3 IRFZ34STRLPbFa SiHFZ34STLPbFa I2PAK (TO-262) IRFZ34LPbF SiHFZ34L-E...