N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP95T10AGP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low ...
Description
Advanced Power Electronics Corp.
AP95T10AGP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
100V 6mΩ 150A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D (tab)
G D S
TO-220 (P)
The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required.
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3
Rating 100 ± 20 150 120 95 480 277.8 2 -55 to 150 -55 to 150
Units V V A A A A W W °C °C
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.45 62 Unit °C/W °C/W
Ordering Information
AP95T10AGP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube)
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
201012222-3
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Advanced Power Electronics Corp.
Electrical Specifications
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS...
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