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AP95T10AGP-HF-3

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP95T10AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low ...


Advanced Power Electronics

AP95T10AGP-HF-3

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Description
Advanced Power Electronics Corp. AP95T10AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Speed RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 100V 6mΩ 150A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D (tab) G D S TO-220 (P) The TO-220 through-hole package is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink are required. Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 100 ± 20 150 120 95 480 277.8 2 -55 to 150 -55 to 150 Units V V A A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.45 62 Unit °C/W °C/W Ordering Information AP95T10AGP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 201012222-3 1/5 Advanced Power Electronics Corp. Electrical Specifications Symbol BVDSS RDS(ON) VGS(th) gfs IDSS...




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