AP40T10GI-HF

Advanced Power Electronics Corp. AP40T10GI-HF RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D G S Description AP40T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID3 100V 36mΩ 40A GD S TO-220CFM(I) Absolute Symbol Maximum RatingPsa@ramTejt=er25o.C(unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 100 V +20 V 40 A 27 A 150 A PD@TC=25℃ Total Power Dissipation 37.5 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201411072 AP40T10GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specifie...