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AP01N40J-HF

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01N40H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ 100% Avalanche Rated ▼ Fast S...


Advanced Power Electronics

AP01N40J-HF

File Download Download AP01N40J-HF Datasheet


Description
AP01N40H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ 100% Avalanche Rated ▼ Fast Switching Performance ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 16Ω 0.5A S Description AP01N40 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N40J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +20 0.5 0.4 2 17.4 Units V V A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation 4 2 2 0.5 -55 to 150 -55 to 150 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 7.2 62.5 110 Units ℃/W ℃/W ℃/W 1 201307113 Maxi...




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