AP16N50W

AP16N50W RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 0.4Ω 16A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 16 11 60 250 3 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 72 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.5 40 Units ℃/W ℃/W 1 201010266 Data and specifications subject to change without notice AP16N50W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Dra...