N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
IRF840P-HF-3
N-channel Enhancement-mode Power MOSFET
Ease of Paralleling Simple Drive...
Description
Advanced Power Electronics Corp.
IRF840P-HF-3
N-channel Enhancement-mode Power MOSFET
Ease of Paralleling Simple Drive Requirement Fast Switching Performance RoHS-compliant, Halogen-free G S D
BV DSS RDS(ON) ID
500V 0.85Ω 8A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The IRF840P-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for high voltage applications such as switch mode power supplies, DC-AC converters and high-current high-speed switching circuits.
G
D
TO-220 (P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 500 ±20 8 5.1 32 125 1
2
Units V V A A A W W/°C mJ A °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
320 8 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 1.0 62 Unit °C/W °C/W
Ordering Information
IRF840P-HF-3TB RoHS-compliant halogen-free TO-220, shipped in tubes
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200704301-3
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