IRF830P-HF-3

Advanced Power Electronics Corp. IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, Halogen-free G S D BV DSS RDS(ON) ID 500V 1.5Ω 4.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The IRF830P-3 is in the TO-220 through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC converters and DC motor drives. G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Rating 500 +20 4.5 2.8 18 74 0.59 2 Units V V A A A W W/°C mJ A °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 101 4.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.7 62 Unit °C/W °C/W Ordering Information IRF830P-3TB RoHS-compliant TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200704202-3 1/5 Advance...