N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2762I-H-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristi...
Description
AP2762I-H-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
700V 1.45Ω 7A
S
Description
AP2762 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. It provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and costeffectiveness. The TO-220CFM package is widely preferred for all commercial-industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
G D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 700 +30 7 24 33
2
Units V V A A W mJ A ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
18 6 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.8 65 Unit ℃/W ℃/W 1 201305282
Data & specifications subject to change without notice
AP2762I-H-HF
Electrical Characteristics...
Similar Datasheet