N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP02N60P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic...
Description
AP02N60P-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ Halogen Free & RoHS Compliant
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
600V 8Ω 2A
S
Description
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment. G D S
TO-220
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 +30 2 1.26 6 39 0.31
2
Units V V A A A W W/ ℃ mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
130 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.2 62 Units ℃/W ℃/W 1 201211203
Data & specifications subject to change without notice
AP02N60P-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
3
Test Conditions VGS=0V, ID=250uA
Min. 600 2 -
Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14
Max. Units 8 4 10 100 +100 20 240 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Bre...
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