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AP02N60P-HF

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP02N60P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic...


Advanced Power Electronics

AP02N60P-HF

File Download Download AP02N60P-HF Datasheet


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AP02N60P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ Halogen Free & RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 2A S Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment. G D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 2 1.26 6 39 0.31 2 Units V V A A A W W/ ℃ mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 130 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.2 62 Units ℃/W ℃/W 1 201211203 Data & specifications subject to change without notice AP02N60P-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 3 Test Conditions VGS=0V, ID=250uA Min. 600 2 - Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14 Max. Units 8 4 10 100 +100 20 240 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Bre...




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