N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60T
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ S...
Description
AP01L60T
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12Ω 160mA
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for all commercial-industrial applications. G D S TO-92
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±30 160 100 300 0.83 -55 to 150 -55 to 150
Units V V mA mA mA W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit ℃/W
Data & specifications subject to change without notice
1 200810225
AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=0V, ID=1mA
2
Min. 600 2 -
Typ. 0.8 0.8 7 1.4 3.4 8 5 13 9 260 20 3 3
Max. Units 12 4 10 100 ±100 11 420 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdo...
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