N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP01L60H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characterist...
Description
AP01L60H/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12Ω 1A
Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications.
G D S
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 600 +30 1 0.8 3 29 0.232 0.5 1 0.5 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 4.3 62.5 110
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1 201010134
AP01L60H/J-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on)...
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