Document
AP01L60AT
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12Ω 160mA
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-92 package is widely used for commercial-industrial applications.
G
TO-92 D S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 600 ± 30 160 100 300 0.83 -55 to 150 -55 to 150
Units V V mA mA mA W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit ℃/W
Data & specifications subject to change without notice
201023073-1/4
AP01L60AT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=1mA
Min. 600 2 -
Typ. 0.8 0.8 6.0 1.0 2.5 6.6 5.0 11.7 9.2 170 30.7 5.1
Max. Units 12 4 10 100 ±100 10 270 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC)
o
VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=0.1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3Ω,VGS=10V RD=300Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.2V IS=160mA, VGS=0V
Min. -
Typ. -
Max. Units 160 1.2 mA V
Forward On Voltage
2
Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4
AP01L60AT
1.5 1
T A =25 C ID , Drain Current (A)
o
10V 6.0V 5.5V 5.0V ID , Drain Current (A)
T A =150 o C
0.75
10V 5.0V
1
4.5V
0.5
0.5
V GS =4.5V
V GS =4.0V
0.25
0 0 12 24 36
0 0 10 20 30 40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I D =0.5A V GS =10V
1.1
Normalized BVDSS (V)
2
Normalized RDS(ON)
1.6
1
1.2
0.8
0.9
0.4
0.8 -50 0 50 100 150
0 -50 0 50 100 150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction Temperature
10 4
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1
3
T j = 150 o C
0.1
o T j = 25 C
VGS(th) (V)
2 1 -50
IS (A)
0.01 0
0.4
0.8
1.2
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP01L60AT
16 1000
f=1.0MHz
VGS , Gate to Source Voltage (V)
12
Ciss I D =0.1A V DS =480V
100
8
C (pF)
Coss
10
4
Crss
0
1
0
2
4
6
8
1
10
19
28
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
0.2
1
0.8
ID , Drain Current (A)
0.15
0.6
0.1
PD (W)
25 50 75 100 125 150
0.4
0.05 0.2
0
0 0 50 100 150
T A , Case Temperature (
o
C)
T A , Case Temperature (
o
C)
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
VDS 90% QG 10V QGS 10% VGS td(on) tr td(off) tf Charge Q QGD VG
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-92
E
SYMBOLS
Millimeters
MIN NOM MAX
A D E b L e1
4.32 4.1 3.1 ---12.7 ----
4.83 4.8 3.9 0.38 --1.27
5.34 5.3 4.7 -----------
A
SEATING PLANE
1.All Dimensions Are in Millimeters.
L
2.Dimension Does Not Include Mold Protrusions.
D
e1
b
Part Marking Information & Packing : TO-92
Part Number
01L60AT YWWSSS
Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence
.