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AP01L60AT Dataheets PDF



Part Number AP01L60AT
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP01L60AT DatasheetAP01L60AT Datasheet (PDF)

AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12Ω 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-92 package is widely used for commercial-industrial applications. G TO-92 D S Absolute Maxim.

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AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12Ω 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-92 package is widely used for commercial-industrial applications. G TO-92 D S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 160 100 300 0.83 -55 to 150 -55 to 150 Units V V mA mA mA W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit ℃/W Data & specifications subject to change without notice 201023073-1/4 AP01L60AT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.8 0.8 6.0 1.0 2.5 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. Units 12 4 10 100 ±100 10 270 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=0.1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3Ω,VGS=10V RD=300Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V IS=160mA, VGS=0V Min. - Typ. - Max. Units 160 1.2 mA V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP01L60AT 1.5 1 T A =25 C ID , Drain Current (A) o 10V 6.0V 5.5V 5.0V ID , Drain Current (A) T A =150 o C 0.75 10V 5.0V 1 4.5V 0.5 0.5 V GS =4.5V V GS =4.0V 0.25 0 0 12 24 36 0 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =0.5A V GS =10V 1.1 Normalized BVDSS (V) 2 Normalized RDS(ON) 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 3 T j = 150 o C 0.1 o T j = 25 C VGS(th) (V) 2 1 -50 IS (A) 0.01 0 0.4 0.8 1.2 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP01L60AT 16 1000 f=1.0MHz VGS , Gate to Source Voltage (V) 12 Ciss I D =0.1A V DS =480V 100 8 C (pF) Coss 10 4 Crss 0 1 0 2 4 6 8 1 10 19 28 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 0.2 1 0.8 ID , Drain Current (A) 0.15 0.6 0.1 PD (W) 25 50 75 100 125 150 0.4 0.05 0.2 0 0 0 50 100 150 T A , Case Temperature ( o C) T A , Case Temperature ( o C) Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation Case Temperature VDS 90% QG 10V QGS 10% VGS td(on) tr td(off) tf Charge Q QGD VG Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-92 E SYMBOLS Millimeters MIN NOM MAX A D E b L e1 4.32 4.1 3.1 ---12.7 ---- 4.83 4.8 3.9 0.38 --1.27 5.34 5.3 4.7 ----------- A SEATING PLANE 1.All Dimensions Are in Millimeters. L 2.Dimension Does Not Include Mold Protrusions. D e1 b Part Marking Information & Packing : TO-92 Part Number 01L60AT YWWSSS Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence .


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