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AP2764AP-A Dataheets PDF



Part Number AP2764AP-A
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP2764AP-A DatasheetAP2764AP-A Datasheet (PDF)

AP2764AP-A RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 1.1Ω 9A Description AP2764A series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. G The TO-220 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies.

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AP2764AP-A RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 650V 1.1Ω 9A Description AP2764A series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. G The TO-220 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DCAC converters and high current high speed switching circuits. D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 9 6 36 104 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200812291 AP2764AP-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o o Test Conditions VGS=0V, ID=1mA 3 Min. 650 2 - Typ. 8 66 10 24 36 46 465 87 470 60 Max. Units 1.1 4 25 500 +100 105 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=50Ω,VGS=10V RD=42.8Ω VGS=0V VDS=15V f=1.0MHz Drain-Source Leakage Current (Tj=125 C) VDS=480V, VGS=0V Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 2730 4400 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω 3.Pulse test o Parameter Forward On Voltage 3 3 Test Conditions IS=4A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/µs Min. - Typ. 480 7 Max. Units 1.5 V ns µC Reverse Recovery Time Reverse Recovery Charge THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2764AP-A 14 8 T C =25 C 12 o 10V 6.0V ID , Drain Current (A) T C =150 o C 6 10V 5.0V 10 ID , Drain Current (A) 8 4 4.5V 6 5.0V 4 2 V G =4.0V 2 V G =4.0V 0 0 5 10 15 20 25 0 5 10 15 20 25 0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =4A V G =10V Normalized BVDSS (V) 1.1 Normalized RDS(ON) -50 0 50 100 150 2 1 1 0.9 0.8 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( C ) o Fig 3. Normalized BVDSS v.s. Junction Temperature 100 3.2 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.8 10 VGS(th) (V) 1.3 1.5 IS (A) T j = 150 o C 1 T j = 25 o C 2.4 2 0.1 1.6 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2764AP-A 16 10000 f=1.0MHz I D =7A VGS , Gate to Source Voltage (V) C iss 12 C (pF) V DS =480V 8 100 C oss 4 0 0 20 40 60 80 100 1 C rss 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 Normalized Thermal Response (Rthjc) 0.2 ID (A) 0.1 0.1 100us 1 0.05 1ms 10ms 100ms DC 100 1000 10000 PDM 0.02 t T 0.01 T c =25 o C Single Pulse 0.1 1 10 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Pac.


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