Document
AP2764AP-A
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
650V 1.1Ω 9A
Description
AP2764A series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. G The TO-220 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DCAC converters and high current high speed switching circuits. D S
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 650 +30 9 6 36 104
2
Units V V A A A W mJ A ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
32 8 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200812291
AP2764AP-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
o
Test Conditions VGS=0V, ID=1mA
3
Min. 650 2 -
Typ. 8 66 10 24 36 46 465 87 470 60
Max. Units 1.1 4 25 500 +100 105 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS=10V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=480V, VGS=0V VGS=+30V, VDS=0V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=50Ω,VGS=10V RD=42.8Ω VGS=0V VDS=15V f=1.0MHz
Drain-Source Leakage Current (Tj=125 C) VDS=480V, VGS=0V
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
2730 4400
Source-Drain Diode
Symbol VSD trr Qrr Notes: 1.Pulse width limited by max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω 3.Pulse test
o
Parameter Forward On Voltage
3 3
Test Conditions IS=4A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 480 7
Max. Units 1.5 V ns µC
Reverse Recovery Time
Reverse Recovery Charge
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP2764AP-A
14 8
T C =25 C
12
o
10V 6.0V ID , Drain Current (A)
T C =150 o C
6
10V 5.0V
10
ID , Drain Current (A)
8
4
4.5V
6
5.0V
4
2
V G =4.0V
2
V G =4.0V
0 0 5 10 15 20 25 0 5 10 15 20 25
0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I D =4A V G =10V Normalized BVDSS (V)
1.1
Normalized RDS(ON)
-50 0 50 100 150
2
1
1 0.9
0.8
0 -50 0 50 100 150
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( C )
o
Fig 3. Normalized BVDSS v.s. Junction Temperature
100 3.2
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.8 10
VGS(th) (V)
1.3 1.5
IS (A)
T j = 150 o C
1
T j = 25 o C
2.4
2
0.1 1.6
0.01 0.1 0.3 0.5 0.7 0.9 1.1
1.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP2764AP-A
16
10000
f=1.0MHz
I D =7A VGS , Gate to Source Voltage (V) C iss
12
C (pF)
V DS =480V
8
100
C oss
4
0
0 20 40 60 80 100
1
C rss
1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Normalized Thermal Response (Rthjc)
0.2
ID (A)
0.1
0.1
100us
1
0.05
1ms 10ms 100ms DC
100 1000 10000
PDM
0.02
t T
0.01
T c =25 o C Single Pulse
0.1 1 10
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Pac.