AP02N70EJ-HF

AP02N70EJ-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ ESD Improved Capability ▼ Simple Drive Requirement ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 7Ω 1.6A S Description AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-251 package is widely preferred for commercial-industrial through hole applications and suited for AC/DC converters. G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 ±20 1.6 1 6.4 45 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 13 1.6 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.8 110 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200804171 AP02N70EJ-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transcond...