AP9620GM-HF

AP9620GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On Resistance ▼ Capable of 2.5V Drive ▼ Fast Switching ▼ RoHS Compliant SO-8 S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S S -20V 20mΩ -9.5A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±8 -9.5 -7.6 -76 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200805061 AP9620GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-9.5A VGS=-2.5V, ID=-6.0A Min. Typ. Max. Units -20 28 30 6 3.5 26 500 70 300 2158 845 230 20 35 -...