AP4425GO

AP4425GO RoHS-compliant Product Advanced Power Electronics Corp. ▼ Small & Thin Package ▼ Fast Switching Characteristic ▼ Capable of 1.8V Gate Drive S D D S P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S G S D -20V 42mΩ -4.2A D TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 ±8 -4.2 -3.3 -30 1 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-L Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-lead 3 Value Max. Max. 120 70 Unit ℃/W ℃/W Data and specifications subject to change without notice 200312072-1/4 AP4425GO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. -20 -0.3 - Typ. -0.01 4 21 6 4.4 13 39 24 72 275 215 Max. Units 42 52 70 -1 -1 -25 ±100 34 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Refere...