P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9451GG-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Description
AP9451GG-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Capable of 2.5V Gate Drive ▼ RoHS Compliant & Halogen-Free G
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-20V 135mΩ - 2.3A
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D D S
SOT-89
G
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3
Rating - 20 +12 -2.3 -1.9 -12 1.25 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 100
Unit ℃/W 1 201106303
Data and specifications subject to change without notice
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AP9451GG-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=-250uA
Min. -20 -0.5 -
Typ. -0.02 2.3 5.5 1 2.5 9 25 20 10 270 100 35 8
Max. Units 135 240 -1.5 -1 -25 +100 9 430 12 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature ...
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