DatasheetsPDF.com

AP4835GMT-HF

Advanced Power Electronics

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4835GMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible ▼ Low O...


Advanced Power Electronics

AP4835GMT-HF

File Download Download AP4835GMT-HF Datasheet


Description
AP4835GMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID -30V 21mΩ -32A D S D D D Description □ Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink. S S S G ® PMPAK 5x6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 +25 -32 -12.5 -10 -70 31.3 5 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 4 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201005031 AP4835GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)