AP9435GK-HF

AP9435GK-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D SOT-223 G D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S -30V 50mΩ -6A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 +20 -6 -4.8 -20 2.7 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance Junction-ambient 3 Value 45 Unit ℃/W 1 201106024 Data and specifications subject to change without notice AP9435GK-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-30V, VGS=0V o Min. Typ. Max. Units -30 -1 4 8 1.5 4 6.6 7.7 22 9.3 570 80 75 50 100 -3 -1 -25 ±100 16 912 V mΩ mΩ V S uA uA nA nC ...