Document
AP3403GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 200mΩ - 10A
Description
G D
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is universally used for all commercialindustrial application.
G D S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating - 30 ± 20 -10 -8.6 -48 36.7 0.29 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200505031
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AP3403GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=-250uA
Min. -30 -1 -
Typ. -0.1
Max. Units 200 400 -3 -1 -25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A
2 3.8 1.7 1.6 6.7 20.8 14.9 4.4 217 103 31
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-6A VDS=-24V VGS=-4.5V VDS=-15V ID=-6A RG=2Ω,VGS=-10V RD=2.5Ω VGS=0V VDS=-25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage2
Reverse Recovery Time Reverse Recovery Charge
Test Conditions IS=-1.25A, VGS=0V IS=-6A, VGS=0V, dI/dt=-100A/µs
Min. -
Typ. 35 63
Max. Units -1.2 V ns nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%.
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AP3403GH/J
12
10
T C =25 o C
10
-ID , Drain Current (A)
8
-5.0V
6
-ID , Drain Current (A)
-10V -8.0V -6.0V
T C =150 o C
8
-10V -8.0V -6.0V
6
-5.0V
4
4
V G =-4.0V
2
V G =-4.0V
2
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
250
1.8
I D =-10A T c =25 ℃ Normalized R DS(ON)
200
1.6
I D =-10A V G = -10V
1.4
RDS(ON) (mΩ )
1.2
150
1
0.8
100 3 4 5 6 7 8 9 10 11
0.6 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
3
100
10
2
-IS(A)
1
T j =150 o C
T j =25 o C
-VGS(th) (V)
1 0 1.3 1.5 -50
0
0 0.1 0.3 0.5 0.7 0.9 1.1
0
50
100
150
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP3403GH/J
14
f=1.0MHz
1000
12
-VGS , Gate to Source Voltage (V)
I D =-10A V DS =-24V Ciss
10
8
C (pF)
100
Coss
6
4
Crss
2
0 0 2 4 6 8 10 12
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
DUTY=0.5
1ms -ID (A) 10ms
10
0.2
0.1
0.1
0.05
PDM
t
0.02 0.01 Single Pulse
100ms T c =25 o C Single Pulse
1
T
Duty factor = t/T Peak T j = PDM x Rthjc + TC
DC
10 100
0.01 0.00001 1 0.0001 0.001 0.01 0.1 1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD VDS D
TO THE OSCILLOSCOPE
D
VDS
TO THE OSCILLOSCOPE 0.5 x RATED VDS
0.5 x RATED VDS
G S VGS
RG
G
S -10 V VGS -1~-3mA IG ID
Fig11. Switching Time Circuit
Fig 12. Gate Charge Circuit
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.